I describe the process of forming a gap filling silicon oxide of high density patterned on a substrate. Such a process, to increase the density of gap filling silicon oxide in a particularly narrow trench. Density can be increased even in an open area and recessed wide trenches. After the treatment, the density of gap filling silicon oxide trench wide / open area within a narrow trench close to each other, the matching degree of the etching rate is increased. This effect can also be described as a reduction of pattern loading effect. This process involves the steps of forming a silicon oxide, and then flattened. New dielectric interface by flattening, are disposed close to the narrow trench is exposed. By exposing to the plasma and annealed / or planarized surface, interface newly exposed facilitates the densification.
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