Process of forming a gap-filling silicon oxide of high density patterned substrate is described. These processes, increase the density of gap filling silicon oxide in a particularly narrow trench. It is also possible to increase the density in an open area and a concave wide trenches. After processing, the narrow trench and density of gap filling silicon oxide trench wide / release region becomes one more similar, it is possible to more closely match the etching rate thereby. This effect can also be described as a reduction of pattern loading effect. This process involves forming a silicon oxide and then planarizing the silicon oxide. By flattening, I expose the new dielectric interface that is disposed closer to the narrow trench. By exposing to the plasma and annealed / or planarized surface, interface newly exposed facilitates the densification.
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