Fabrication of n-type microcrystalline silicon oxide films for use as back reflectors in silicon based thin film solar cells

摘要

This invention relates generally to thin film semiconductor alloys and more particularly to wide band gap, n-type microcrystalline semiconductor alloy materials. This invention relates to a method of fabricating n-type microcrystalline SiOx layers using the same RF PECVD reactor as used for thin-film silicon solar cells. The developed n-�c-SiOx:H material provides a cost-effective replacement for Aluminium doped Zinc Oxide for back reflector layers and also provides a more simplified process for the fabrication of thin film solar cells.