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Method of detecting specific defect, and system and program for detecting specific defect

机译:检测特定缺陷的方法以及检测特定缺陷的系统和程序

摘要

The present invention provides a detection method which allows specific defects that would occur on a wafer surface to be detected more reliably. A method of detecting a specific defect of the present invention includes the steps of: acquiring a light point map which is in-plane position information of a light point detected in a position corresponding to a defect on a surface of a wafer by irradiating the surface of the wafer with light (S101); specifying a determination region where a specific defect is expected to be formed and a reference region which is a given region other than the determination region in the light point map, and calculating a ratio of a light point density of the determination region to a light point density of the reference region (S102); and determining whether or not the specific defect is formed based on the calculated ratio (S103).
机译:本发明提供了一种检测方法,该检测方法允许更可靠地检测将在晶片表面上发生的特定缺陷。本发明的特定缺陷的检测方法包括以下步骤:通过照射表面来获取光点图,该光点图是在与晶片的表面上的缺陷相对应的位置中检测到的光点的面内位置信息。用光照射晶片(S 101 );在光点图中指定要形成特定缺陷的判定区域和除该判定区域以外的给定区域的基准区域,并计算该判定区域的光点密度与光点的比率。参考区域的密度(S 102 );然后根据计算出的比率(S 103 )判断是否形成了特定缺陷。

著录项

  • 公开/公告号US8736832B2

    专利类型

  • 公开/公告日2014-05-27

    原文格式PDF

  • 申请/专利权人 TAKESHI FUNADA;

    申请/专利号US201213428064

  • 发明设计人 TAKESHI FUNADA;

    申请日2012-03-23

  • 分类号G01N21/956;

  • 国家 US

  • 入库时间 2022-08-21 16:02:39

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