METHOD FOR FORMING A GATE ELECTRODE OF A SEMICONDUCTOR DEVICE, GATE ELECTRODE STRUCTURE FOR A SEMICONDUCTOR DEVICE AND ACCORDING SEMICONDUCTOR DEVICE STRUCTURE

摘要

A method for forming a gate electrode (150; 250a) of a semiconductor device (100, 200a), the process comprising:Forming a first high - k dielectric layer (153; 253) via a first active region (202a) of a semiconductor substrate (102; 202);Forming a first metal material which has (107, 154; 207, 254) on the first high - k dielectric layer (153; 253);Carrying out a first annealing process (108; 208);The removal of the first metal material which has (107, 154; 207, 254) for exposing the first high - k dielectric layer (153; 253); andForming a second high - k dielectric layer (155; 251) on the first high - k dielectric layer (153; 253) after the implementation of the first annealing process (108; 208).