机译:带有石墨烯栅电极的金属氧化物半导体器件中的栅隧穿电流和量子电容
Department of Electrical and Computer Engineering, University of Florida, Gainesville, Florida 32611, USA;
Department of Electrical and Computer Engineering, University of Florida, Gainesville, Florida 32611, USA;
Department of Electrical and Computer Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, USA;
Department of Electrical and Computer Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, USA,Department of Electrical Engineering, Stanford University, Stanford, California 94305, USA;
Department of Electrical and Computer Engineering, University of Florida, Gainesville, Florida 32611, USA;
机译:量子金属氧化物半导体场效应晶体管装置的栅极电容技术重要材料
机译:GaN基沟槽型垂直金属氧化物半导体器件栅极电容建模
机译:GaN基沟槽型垂直金属氧化物半导体器件栅极电容建模
机译:栅极下重叠对16 nm DGMOS器件中栅极电容和栅极隧穿电流的影响
机译:机械应力对硅和锗金属氧化物半导体器件的影响:沟道迁移率,栅极隧穿电流,阈值电压和栅极堆叠
机译:在分裂门控石墨烯器件中具有完全退化的量子霍尔边缘通道的可调传输
机译:量子电容:金属绝缘体 - 半导体器件中的负量子电容效应,复合石墨烯 - 封装门(ADV。电子。Matter。4/2016)