首页> 外国专利> Method of manufacturing a substrate for a high-efficiency nitride-based light-emitting diode having a nano-level pattern (MethodFor Fabricating NanoPatternedSubstituteForHighEfficiencyNitridebasedLightEmittingDiode)

Method of manufacturing a substrate for a high-efficiency nitride-based light-emitting diode having a nano-level pattern (MethodFor Fabricating NanoPatternedSubstituteForHighEfficiencyNitridebasedLightEmittingDiode)

机译:用于制造具有纳米级图案的高效氮化物基发光二极管的基板的方法(用于制造高效氮化物基纳米发光二极管的发光二极管的制造方法)

摘要

The method for manufacturing a substrate for a light emitting diode according to the present invention provides a method including a convex forming step and a crystallization step. By using the light emitting diode substrate of the present invention, the light extraction improvement value can be greatly increased, and a nano-level pattern can be formed economically. [Selection] Figure 1
机译:根据本发明的用于制造发光二极管的基板的方法提供了一种包括凸起形成步骤和结晶步骤的方法。通过使用本发明的发光二极管基板,可以大大提高光提取改善值,并且可以经济地形成纳米级图案。 [选择]图1

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