首页> 外国专利> Method of manufacturing a substrate for a high-efficiency nitride-based light-emitting diode having a nano-level pattern (MethodFor Fabricating NanoPatternedSubstituteForHighEfficiencyNitridebasedLightEmittingDiode)

Method of manufacturing a substrate for a high-efficiency nitride-based light-emitting diode having a nano-level pattern (MethodFor Fabricating NanoPatternedSubstituteForHighEfficiencyNitridebasedLightEmittingDiode)

机译:用于制造具有纳米级图案的高效氮化物基发光二极管的基板的方法(用于制造高效氮化物基纳米发光二极管的发光二极管的制造方法)

摘要

Provided is a method of manufacturing a substrate for a light emitting diode including a convex section forming step and a crystallization/crystallizing step. According to the method and the substrate for the light emitting diode, light extraction is significantly improved and nano to micron sized pattern, economically formed.
机译:提供一种用于制造发光二极管的基板的方法,其包括凸部形成步骤和结晶/结晶步骤。根据该方法和用于发光二极管的基板,显着改善了光提取并且经济地形成了纳米至微米尺寸的图案。

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