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Enhanced electron mobility at the interface between GD2O3(100)/N-SI(100)
Enhanced electron mobility at the interface between GD2O3(100)/N-SI(100)
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机译:在GD2O3(100)/ N-SI(100)之间的界面处增强了电子迁移率
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摘要
A multilayered structure is provided. The multilayered structure may include a silicon substrate and a film of gadolinium oxide disposed on the silicon substrate. The top surface of the silicon substrate may have silicon orientated in the 100 direction (Si(100)) and the gadolinium oxide disposed thereon may have an orientation in the 100 direction (Gd2O3(100)).
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机译:提供了多层结构。多层结构可以包括硅衬底和设置在硅衬底上的氧化g膜。硅衬底的顶表面可以具有在100方向上取向的硅(Si(100)),并且布置在其上的氧化g可以具有在100方向上取向的(Gd 2 Sub> O 3 Sub>(100))。
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