首页> 外国专利> SUPPORT RING FOR SUPPORTING A SEMICONDUCTOR WAFER COMPOSED OF MONOCRYSTALILLINE SILICON DURING A THERMAL TREATMENT, METHOD FOR THE THERMAL TREATMENT OF SUCH A SEMICONDUCTOR WAFER, AND THERMALLY TREATED SEMICONDUCTOR WAFER COMPOSED OF MONOCRYSTALLINE SILICON

SUPPORT RING FOR SUPPORTING A SEMICONDUCTOR WAFER COMPOSED OF MONOCRYSTALILLINE SILICON DURING A THERMAL TREATMENT, METHOD FOR THE THERMAL TREATMENT OF SUCH A SEMICONDUCTOR WAFER, AND THERMALLY TREATED SEMICONDUCTOR WAFER COMPOSED OF MONOCRYSTALLINE SILICON

机译:用于在热处理过程中支撑由单硅烷基硅组成的半导体晶片的支撑环,用于这种半导体晶片的热处理的方法以及由单晶硅构成的热处理过的半导体晶片

摘要

A SUPPORT RING FOR SUPPORTING A SEMICONDUCTOR WAFER COMPOSED OF MONOCRYSTALLINE SILICON DURING A THERMAL TREATMENT OF THE SEMICONDUCTOR WAFER, COMPRISING AN OUTER AND AN INNER LATERAL SURFACE AND A CURVED SURFACE EXTENDING FROM THE OUTER TO THE INNER LATERAL SURFACE AND SERVING FOR THE PLACEMENT OF THE SEMICONDUCTOR WAFER WITH A RADIUS OF CURVATURE OF NOT LESS THAN 6000 MM AND NOT MORE THAN 9000 MM, IF THE SURFACE IS DESIGNED FOR THE PLACEMENT OF A SEMICONDUCTOR WAFER HAVING A DIAMETER OF 300 MM, OR WITH A RADIUS OF CURVATURE OF NOT LESS THAN 9000 MM AND NOT MORE THAN 14 000 MM, IF THE SURFACE IS DESIGNED FOR THE PLACEMENT OF A SEMICONDUCTOR WAFER HAVING A DIAMETER OF 450 MM. A METHOD FOR THE THERMAL TREATMENT OF SUCH A SEMICONDUCTOR WAFER, AND A THERMALLY TREATED SEMICONDUCTOR WAFER COMPOSED OF MONOCRYSTALLINE SILICON.
机译:一个支撑环,用于在半导体晶片的热处理期间支撑由单晶硅组成的半导体晶片,包括外表面和内侧面,以及从内表面到内表面的弯曲表面曲面半径不超过6000毫米且不超过9000毫米的晶片,如果表面设计用于放置直径为300毫米的半导体晶片,或者半径不超过9000毫米的晶片如果表面设计用于放置直径为450毫米的半导体晶圆,且厚度不超过14000毫米。一种用于热处理这种半导体晶片的方法,以及一种由单晶硅组成的经过热处理的半导体晶片。

著录项

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号