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SUPPORT RING FOR SUPPORTING A SEMICONDUCTOR WAFER COMPOSED OF MONOCRYSTALILLINE SILICON DURING A THERMAL TREATMENT, METHOD FOR THE THERMAL TREATMENT OF SUCH A SEMICONDUCTOR WAFER, AND THERMALLY TREATED SEMICONDUCTOR WAFER COMPOSED OF MONOCRYSTALLINE SILICON
SUPPORT RING FOR SUPPORTING A SEMICONDUCTOR WAFER COMPOSED OF MONOCRYSTALILLINE SILICON DURING A THERMAL TREATMENT, METHOD FOR THE THERMAL TREATMENT OF SUCH A SEMICONDUCTOR WAFER, AND THERMALLY TREATED SEMICONDUCTOR WAFER COMPOSED OF MONOCRYSTALLINE SILICON
A SUPPORT RING FOR SUPPORTING A SEMICONDUCTOR WAFER COMPOSED OF MONOCRYSTALLINE SILICON DURING A THERMAL TREATMENT OF THE SEMICONDUCTOR WAFER, COMPRISING AN OUTER AND AN INNER LATERAL SURFACE AND A CURVED SURFACE EXTENDING FROM THE OUTER TO THE INNER LATERAL SURFACE AND SERVING FOR THE PLACEMENT OF THE SEMICONDUCTOR WAFER WITH A RADIUS OF CURVATURE OF NOT LESS THAN 6000 MM AND NOT MORE THAN 9000 MM, IF THE SURFACE IS DESIGNED FOR THE PLACEMENT OF A SEMICONDUCTOR WAFER HAVING A DIAMETER OF 300 MM, OR WITH A RADIUS OF CURVATURE OF NOT LESS THAN 9000 MM AND NOT MORE THAN 14 000 MM, IF THE SURFACE IS DESIGNED FOR THE PLACEMENT OF A SEMICONDUCTOR WAFER HAVING A DIAMETER OF 450 MM. A METHOD FOR THE THERMAL TREATMENT OF SUCH A SEMICONDUCTOR WAFER, AND A THERMALLY TREATED SEMICONDUCTOR WAFER COMPOSED OF MONOCRYSTALLINE SILICON.
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