Manufacturing method of low-temperature substrate graphene growth and low-temperature substrate graphene growth and manufacturing device

摘要

This is designed, a. Since the metal layer on the substrate provided that, b. At a temperature below 500 carbon-containing gas and supplying the etching gas, and an inductively coupled plasma chemical vapor deposition (Inductively Coupled Plasma-Chemical Vapor Deposition; ICP-CVD), perform the, c. The carbon-supplying gas as the etching of the metal included in the gas supply, and the graphene growth on the metallic layer, d. In the steps c, continuously inductively coupled plasma chemical vapor deposition (Inductively Coupled Plasma-Chemical Vapor Deposition; ICP-CVD), but perform, due to the etching gas, the metal of the metal layers is continued to remove all, not including the metal layer So the state will have to grow to a pin on a substrate; Low-temperature substrate for the growth characterized Yes provides a method for producing a pin. In addition, the present design is Low temperature growth of graphene as a substrate, The low temperature growth substrate Graphene, direct contact to a surface of the substrate, The low-temperature substrate growth Yes in a first direction parallel to the surface of the pin the grain diameter, the low-temperature substrate growth yes larger than the crystal grain diameter in the other one of the direction parallel to the surface of the pins, The low temperature growth substrate Yes grain diameter in the direction of the first pin, to the yes larger than the grain diameter in the direction perpendicular to the surface of the pins; The features that provide a low-temperature growth of graphene substrate. In addition, the present design is Low temperature growth of graphene as a substrate, The low-temperature substrate growing graphene, direct contact to a surface of the substrate, The low-temperature substrate growing graphene, has a crystal grain boundary in accordance with the direction of the first parallel to the surface, The low-temperature substrate growing graphene, has a crystal grain boundary in accordance with the direction of the second parallel to the surface, The low-temperature substrate is to grow graphene in a single crystal in the inside of the region surrounded by the grain boundaries; The features that provide a low-temperature growth of graphene substrate. In addition, the present design is Low temperature growth of graphene as a substrate, The low-temperature substrate growing graphene, direct contact to a surface of the substrate, The low-temperature substrate growing graphene, having a plurality of grain boundaries in accordance with a first direction parallel to said surface, The low-temperature substrate growing graphene, having a plurality of grain boundaries in accordance with the direction of the second parallel to the surface, The low-temperature substrate is to grow graphene in a single crystal in the inside each of the regions surrounded by the grain boundaries; The features that provide a low-temperature growth of graphene substrate. In addition, the present design is Carbon-containing gas supply unit for supplying the gas and the etching gas; The carbon from the gas supply-gas injection unit for injecting the gases and the etching gas being supplied to include; ; Substrate having a metal layer disposed in contact with the contained gas and the etching gas, carbon gas injected from the spout And ; A heating device arranged to heat the region of the substrate having a metal layer in contact with the contained gas and the etching gas, the jet of carbon And Inductively coupled plasma (Inductively Coupled Plasma) forming device for forming a plasma by inductive magnetic field is formed by applying a high-frequency power; The A low-temperature growth substrate that comprises Yes provides a production device pin. ;