ITO sputtering target, method for producing the same, ITO transparent conductive film, and method for producing ITO transparent conductive film

摘要

A sintered body composed of In, Sn, O, and inevitable impurities, and Sn / (In + Sn) is 1.8% or more and 3.7% or less (except 3.7%) by atomic ratio. Sn is contained, the average crystal grain size of the sintered body is in the range of 1.0 to 5.0 μm, the pores having a major axis diameter of 0.1 to 1.0 μm are 0.5% or less in area ratio, It consists of two phases, an indium oxide phase and a tin oxide rich phase. The area ratio of the tin oxide rich phase is 0.1 to 1.0% or less, and 95% or more of the tin oxide rich phase is present at the grain boundary triple point. The present invention relates to a sputtering target. It is an ITO sputtering target having a low tin oxide composition suitable for forming a transparent conductive film and capable of obtaining a low resistance film even at a low temperature. The target has a small particle size, high density, high strength, arcing and A sputtering target capable of reducing nodules can be provided.