ITO sputtering target and its manufacturing method, and manufacturing method of ITO transparent conductive film and ITO transparent conductive film

摘要

PROBLEM TO BE SOLVED: To provide an ITO sputtering target having a low tin oxide composition capable of forming a film having low resistance even at a low temperature, and the target has a small particle size, a high density, a high strength, and an ITO sputtering capable of reducing arcing and nodules. Target provision. SOLUTION: The sintered body is composed of In, Sn, O and unavoidable impurities, and contains Sn having an atomic ratio of Sn / (In + Sn) of 4.1% or more and 5.1% or less. The average crystal grain size of the sintered body is in the range of 2.0 to 6.0 μm, the pores with a diameter of 0.1 to 1.0 μm in the sintered body are 0.3% or less in area ratio, and the sintered body is sintered. The structure of the body consists of two phases, an indium oxide phase and a tin oxide rich phase. As a result of surface analysis by EPMA, the area ratio of the tin oxide rich phase is 2% or more and 8% or less, and 90 of the tin oxide rich phase. ITO sputtering target in which% or more of particles are not adjacent to each other. [Selection diagram] None