Method for producing thin-film resistance structures with memory effect and a thin-film resistance structure with memory effect

摘要

the subject of manufacturing thin-film structures is the way of the sketch and structure resistance resistive effect sketch, in particular produced based on a mixture of oxides of transition metal, osadzanych using wielotargetowego system adu to spraying magnetronowego.the way in which it is sprayed materials with at least two targets made of different materials, and rozpylone materials applied in form of oxide layer on at least one substrate, characterized by that,that layer tlenkowa (wg) has a gradient distribution in the thickness of the layer of material (wg) and that the layer tlenkowu0105 (wg) inscribed in the form of a mixture of metal oxides on the properties of insulating selected from titanium oxide, hafnium oxide group, zirconium oxide and niobium oxide and t lenku00f3w properties selected from the group of: semiconductor copper oxide, cobalt oxide,iron oxide and molybdenum oxide.thin film resistive structure with a sketch tlenkowu0105 containing layer between the lower and upper electrodes, characterised by the fact that the tlenkowa (wg) contains a mixture of at least two oxides of gradientowym materials in the thickness distribution function the layers (wg),at least one metal oxide has insulation properties and is selected from titanium oxide, hafnium oxide group, zirconium oxide and niobium oxide and at least one metal oxide semiconductor properties and is selected from group: copper oxide, cobalt oxide, iron oxide and molybdenum oxide.