METHOD FOR CLEANING COMPOUND SEMICONDUCTOR AND SOLUTION FOR CLEANING OF COMPOUND SEMICONDUCTOR

摘要

It provides a method of cleaning the compound semiconductor capable of reducing the environmental load. A method of cleaning the compound semiconductor, including the purity and less than 65 wt% of sulfuric acid and using a solution 17 having a pH and oxidation-reduction potential of at least 0.6 volts of pH 2 or less, having a gallium as a constituent element 4, the processing for cleaning the compound semiconductor includes a step performed at a temperature of 70 ° C or more.