GaN - SELF-ALIGNED STRUCTURES AND METHODS FOR ASYMMETRIC GAN TRANSISTORS ENHANCEMENT MODE OPERATION

摘要

Embodiments include HEMTs (High Electron Mobility Transistors). In embodiments, the gate electrode is spaced apart from the source and drain semiconductor regions by different distances to provide a high breakdown voltage and a low on-state resistance. In embodiments, self-aligning techniques are applied to form a dielectric liner within the trenches and on the mandrel between them, which independently defines the gate length, gate-source length, and gate-drain length in a single masking operation. In embodiments, the III-N HEMTs include fluorine doped semiconductor barrier layers for threshold voltage tuning and / or elevated mode operation.