To provide a method for evaluation about a physical value concerning the behavior of a point defect, by which vacancy and I-Si behaviors can be grasped separately by only combination of relatively common techniques.SOLUTION: A point defect evaluation method is provided, which comprises the steps of: performing a thermal treatment on a sample cut from crystal involving void defects, which is grown by Czochralski (CZ) method or magnetic field-applied CZ (MCZ) method, provided that the thermal treatment is conducted at a temperature equal to or higher than a temperature that causes an internal wall oxide film of a void defect to dissolve and depends on an interstitial oxygen concentration in crystal, while at least one of a temperature and time is changed; and evaluating a physical property value concerning the behavior of a point defect from one or more of respective changes of the void defect size, density and a defect-free layer depth, which are observed accompanying the change in thermal treatment condition.SELECTED DRAWING: Figure 1
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