Si Si Ni METHOD FOR PRODUCING NICKEL THIN FILM ON Si SUBSTRATE BY CHEMICAL VAPOR DEPOSITION METHOD AND METHOD FOR PRODUCING Ni SILICIDE THIN FILM ON Si SUBSTRATE

摘要

The present invention is a method for producing a nickel thin film on a Si substrate by a chemical vapor deposition method, and as a raw material compound, a nickel, cyclopentadienyl group (Cp) or a derivative thereof and 3 to 9 carbon atoms represented by the following formula It is a nickel complex coordinated by the chain | strand or cyclic alkenyl group contained, or its derivative (s), The hydrocarbon type nickel complex which does not contain elements other than carbon and hydrogen in a structure is used, Hydrogen is used as reaction gas, Moreover, film-forming conditions It is a method of manufacturing a nickel thin film at 1-150 torr and film forming temperature of 80-250 degreeC. [Formula 1] (Wherein X is a linear or cyclic alkenyl group or derivative thereof containing 3 to 9 carbon atoms. Substituents R ₁ to R ₅ of a cyclopentadienyl group are C _n H _2n+1 and n is 0 to 6 Is an integer of)