Growth and Electrical Properties of 25%Bi(Ni_(1/2)Ti_(1/2))O_3-75%PbTiO_3 Thin Films on Pt/TiO_2/SiO_2/Si Substrates Using Pulsed Laser Deposition Method

摘要

We report on growth of 25%Bi(Ni_(0.5)Ti_(0.5))03-75%PbTiO_3 (25BNiT-PT) solid solution thin films and good electrical properties such as high remanent polarization, high dielectric constant, and low dissipation factor. The thin films prepared on Pt/ TiO_2/SiO_2/Si substrates by pulsed laser deposition were well crystallized with a phase-pure perovskite structure. Well-saturated P-E hysteresis loops were observed with a much larger remanent polarization than that of corresponding ceramic counterparts reported before in literature. The remanent polarization P_r and coercive field E_c were 40.9 μC/cm~2 and 117 kV/ cm, respectively, for the thin films annealed at 650°C. The thin films had a high dielectric constant of about 400-500 and a low dissipation factor of 0.03 at a frequency of 1 kHz. The good polarization characteristics of the thin films are very significant for high-temperature ferroelectric device applications.