Analytic Distribution for Charge Carriers in a Semiconductor Dominated by Equivalent Intervalley Scattering

摘要

The transport of charge carriers in Silicon immersed in an electric field is studied using the quasiclassical Uehling-Uhlenbeck equation. Strain-acoustic and equivalent intervalley electron-phonon interactions are taken into account. A nonlinear difference-differential equation for the distribution function of this equation is constructed from which an expression for drift velocity is derived. Comparison with values obtained from this expression is found to give very good agreement with experimental measurement for electric fields up to 100,000 V/cm. (RH)