Exchange and correlation effects in strained-layer semiconductor quantum wells

摘要

We examine the exchange and the correlation effects for a quasi-two-dimensional InxGa1-x As/InGaAsP QW systems with strain, considering the complexities related to the effect of valence-band mixing. The many-body effects due to exchange interaction and screening of Coulomb interaction are calculated within the random-phase approximation. The valence-band structure is obtained by solving the Luttinger-Kohn Hamiltonian to evaluate the valence-band mixing and the strain effects properly. The dependence of the many-body effects on strain and sheet carrier density is shown to become more important as the screening of the Coulomb interaction is included. Also, it is shown that the exchange and correlation energy becomes important as indium mole fraction and sheet carrier density increase. (C) 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinhema.