The Hydrostatic Pressure Dependence of the Threshold Current in 1.3 #mu#m InGaAsP Quantum Well Semiconductor Diode Lasers

摘要

We have measured the change in threshold current and lasing photon energy as a function of pressure in 1.3#mu#m semiconductor quantum well lasers. We observe a decrease in threshold current with increasing pressure indicative of an Auger recombination process which decreases as the band gap increases. We have also measured the temperature dependence of the threshold current from 90 to 350 K. Near 170 K the characteristic temperature T_0 goes through a maximum value at a `breakpoint' temperature T_B. By comparison, in 1.5 #mu#m lasers the value of T_B occurs near 130 K. This indicates that Auger recombination is less significant in the 1.3 #mu#m than in the 1.5 #mu#m devices in agreement with the high pressure observations.