ASSESSMENT OF THE POSSIBILITY OF DETERMINATION OFTHE ELECTROPHYSICAL CHARACTERISTICS OF Cd_xHg_(1-x)Tep~+—n-STRUCTURESUSING DIFFERENTIAL HALL MEASUREMENTS

摘要

The process of reconstuction of the distribution profile of hole concentration in the p~+—n structure by themethod of differential Hall measurements upon implantation of ions As~+(E = 190 keV, D 310~(14)cm~(-2),j = 0.025 μA/cm~2) into epitaxial filmsCd_xHg_(1-X)Tefor x～0.2, with the initial electron concentration andmobility n = 10~(14)cm~(-3)and μ=2·10~5cm~2·V~(-1)·s~(-1) is numerically simulated. The dependences of degree ofreconstruction of the hole-concentration distribution profile on the depth of a shunting n-layer and magnitudeof the magnetic field, at which the electrophysical parameters of the p~+—n structure are measured, arecalculated. The dependence of the limiting magnetic field determining the magnetic-field range formeasurements on the n-layer depth is found. It is shown that in calculations one should use the conductionvalues measured at the same magnetic fields as the Hall coefficients for determination of the hole-concentration distribution profile using the Petritz model.