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首页> 外文期刊>Synthetic Metals >Structural transformation of carbon nanotubes to silicon carbide nanorods or microcrystals by the reaction with different silicon sources in rf induced CVD reactor
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Structural transformation of carbon nanotubes to silicon carbide nanorods or microcrystals by the reaction with different silicon sources in rf induced CVD reactor

机译:射频诱导CVD反应器中碳纳米管与不同硅源的反应结构转变为碳化硅纳米棒或微晶

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Silicon carbide (SiC) nanorods and microcrystals were synthesized through a two-step reaction scheme. Carbon nanotubes (CNTs) were first grown over metal catalyst-loaded Si(100) wafer surface by thermal decomposition of C_2H_2. The grown CNTs were then reacted with a gas mixture of SiH_4 and C_3H_8 or tetramethylsilane (TMS) to form beta-SiC nanostructures. The growth of SiC nanorods was observed when CNTs were reacted with SiH_4 and C_3H_8, whereas SiC microcrystals were formed when reacting the CNTs with TMS. However, the SiC nanostructures were not grown without CNTs. The diameter of the nanorods was around six times larger than that of the mother nanotubes. The nanorods were crystalline beta-SiC with the diameter of 300-400 nm and grew along (111) direction. The structural transformation of CNTs to SiC nanorods or to microcrystals during the reaction was discussed in this paper.
机译:通过两步反应方案合成了碳化硅(SiC)纳米棒和微晶。碳纳米管(CNTs)首先通过C_2H_2的热分解在载有金属催化剂的Si(100)晶片表面上生长。然后使生长的CNT与SiH_4和C_3H_8或四甲基硅烷(TMS)的气体混合物反应以形成β-SiC纳米结构。当CNT与SiH_4和C_3H_8反应时,观察到SiC纳米棒的生长,而当CNT与TMS反应时,SiC微晶形成。但是,没有纳米碳管就无法生长SiC纳米结构。纳米棒的直径大约是母纳米管的直径的六倍。纳米棒是直径为300-400 nm的结晶β-SiC,并沿(111)方向生长。本文讨论了碳纳米管在反应过程中向碳化硅纳米棒或微晶的结构转变。

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