Effect of indium (III) content on photoelectrochemical performance of MoBi_(2-x)In_xS_5 thin films

摘要

Highly ordered quaternary semiconducting MoBi_(2-x))In_xS_5 nanocrystalline thin films have been successfully synthesized via a relatively simple and convenient Arrested Precipitation Technique (APT). This solution based technique is being scaled up and may serve as the basis for the next generation of low cost solar cells. Depending on the chemical composition and synthesis conditions, the morphology of the nanocrystalline thin films can be controlled by [In]/[Bi] molar ratio. The structural, morphological, compositional and optical absorption properties of as-synthesized MoBi_(2-x)In_xS_5 thin films are characterized using X-ray diffraction (XRD), high resolution transmission electron microscope (HRTEM), scanning electron microscope (SEM), field emission scanning electron microscope (FESEM), energy dispersive X-ray spectroscopy (EDS), X-ray photoelectron spectroscopy (XPS) and UV-Vis-NIR spectrophotometry techniques. The photoelectrochemical (PEC) characterization of the films were carried out in 0.05 M I~-/I_3 redox electrolyte under dark and illuminated conditions. The maximum photocurrent density (411 μA/cm~2) is obtained for molar ratio [In]/[Bi] = 1 using 500 W tungsten filament lamp with light intensity 30 mW/cm~2.