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Electronic structure and magnetic Interactions in M-doped beta-Ga_2O_3 from first-principles calculations

机译:从第一性原理计算M掺杂的β-Ga_2O_3中的电子结构和电磁相互作用

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摘要

Based on first-principles spin-polarized density functional theory calculations, the electronic structures and magnetic interactions of Ni-doped beta-Ga_2O_3 are investigated. Calculations predict that the spin-polarized state, with a magnetic moment of about 1.0 or 3.0 mu_B per Ni-dopant when one Ni atom substitutes the octahedral or tetrahedral site, is more favorable in energy than that of non-spin polarized state. Ferromagnetic state, with an ordering temperature above room-temperature, is most stable for the structure in which one Ni substitutes the octahedral site.
机译:基于第一性原理自旋极化密度泛函理论计算,研究了掺Ni的β-Ga_2O_3的电子结构和磁相互作用。计算预测,当一个Ni原子取代八面体或四面体位点时,每个Ni掺杂剂的磁矩为约1.0或3.0μB的自旋极化态比非自旋极化态的能量更有利。有序温度高于室温的铁磁状态对于其中一个Ni取代八面体位点的结构最稳定。

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