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InAs/GaAs quantum-dot saturable absorber for a diode-pumped passively mode-locked Nd : YVO4 laser at 1342 nm

机译:InAs / GaAs量子点可饱和吸收体,用于1342 nm的二极管泵浦无源锁模Nd:YVO4激光器

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摘要

We report that lnAs/GaAs quantum dots were developed to be saturable absorbers as well as output couplers in diode-pumped passively mode-locked Nd:YVO4 lasers at 1342 nm. With an incident pump power of 12.6 W, an average output power of 0.85 W with a mode-locked pulse width of 26 ps at a repetition rate of 152 MHz was obtained. (c) 2005 Optical Society of America
机译:我们报告说,在二极管泵浦的无源锁模Nd:YVO4激光器中1342 nm处,InAs / GaAs量子点被开发为可饱和吸收体以及输出耦合器。在12.6 W的入射泵浦功率下,在152 MHz的重复频率下,平均输出功率为0.85 W,锁模脉冲宽度为26 ps。 (c)2005年美国眼镜学会

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