Charge-selective raman scattering and fluorescence quenching by 'nanometal on Semiconductor' substrates

摘要

Ag nanoparticles synthesized on n and p-type Si were shown to exhibit charge-selective surface-enhanced Raman scattering and fluorescence quenching. As revealed by electric force microscopy, the polarity and magnitude of the nanoparticle charge is controllable with the metal-semiconductor Fermi level difference and nanoparticle size. It is inferred that the Fermi level alignment is dominantly contributed by the charge-induced nanoparticle voltage. Nanoparticle charging also accounts for self-inhibition of coalescence during chemical reduction, allowing strong plasmon hybridization.