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首页> 外文期刊>Modern Physics Letters, B. Condensed Matter Physics, Statistical Physics, Applied Physics >Variational calculations of charged excitons in GaAs quantum-well wires
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Variational calculations of charged excitons in GaAs quantum-well wires

机译:GaAs量子阱线中带电激子的变分计算

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摘要

The binding energy of positively and negatively charged excitons in Ga-As quantum-well wires is calculated variationally as a function of the wire width by using a two-parameter wave function and a one-dimensional equivalent model. There is no artificial parameter added in our calculation. It is found that the binding energies are closely correlated to the sizes of the wire, and also that their magnitudes are greater than those in the two-dimensional quantum wells compared. In addition, we also calculate the average interparticle distance and the distribution of the wave function of exciton centre-of-mass as functions of the wires width. The results are discussed in detail.
机译:通过使用两参数波函数和一维等效模型,Ga-As量子阱导线中带正电荷和负电荷的激子的结合能随导线宽度的变化而变化。在我们的计算中没有添加任何人工参数。发现结合能与金属丝的尺寸紧密相关,并且它们的大小也比所比较的二维量子阱中的大。另外,我们还计算了平均粒子间距离和激子质心的波动函数随导线宽度的变化。详细讨论了结果。

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