CuxSbySz thin films produced by annealing chemically deposited Sb2S3-CuS thin films

摘要

The possibility of generating ternary compounds through annealing thin film stacks of binary composition has been demonstrated before. In this work we report a method to produce large area coating of ternary compounds through a reaction in solid state between thin films of Sb2S3, and CuS. Thin films of Sb2S3-CuS were deposited on glass substrates in the sequence of Sb2S3 followed by CuS (on Sb2S3) using chemical bath deposition method. The multilayer stack, thus produced, of approximately 0.5 mum fit thickness, where annealed under nitrogen and argon atmospheres at different temperatures to produce films of ternary composition, CuxSbySz. An optical band gap of similar to1.5 eV was observed in these films, suggesting that the thin Films of ternary composition formed in this way are suitable for use as absorber materials in photovoltaic devices. The results on the analyses of structural, electrical and optical properties of films formed with different combinations of thickness in the multilayers will be discussed in the paper. [References: 6]