Photoluminescence from amorphous silicon oxide films prepared by HFCVD technique

摘要

The photoluminescence (PL) properties of hydrogen (H) rich silicon oxide films prepared by hot filament enhanced chemical vapor deposition (HFCVD) have been studied. The observed PL change follow the change in the hydrogen incorporation, detected by transmission Fourier transform spectroscopy (FTIR). FTIR spectra show that the oxygen and hydrogen atoms are bonded to the same silicon atom. There is no evidence from the formation of OH groups. [References: 2]