K-BAND POWER DIVIDER WITH METAL BRIDGE STRUCTURES FOR SIZE REDUCTION USING CMOS TECHNOLOGY

摘要

A K-band power divider with metal bridge structures, which is based on the Wilkinson type is proposed using a standard 0.18 μm CMOS process. The metal bridge structures are applied to the power divider to achieve small size. Additionally, slow-wave structures such as meandered line and slot pattern ground are used for small chip size and high performance. The proposed power divider shows an improved slow-wave factor of 8.2% compared with a power divider with the conventional meandered line structure. The proposed power divider presents a size of 306×296 μm and wide bandwidth of 58% for isolation <15 dB.