Silicon-on-insulator lateral dual sidewall Schottky (SOI-LDSS) concept for improved rectifier performance: a two-dimensional simulation study

Kumar MJ; Reddy CL

首页> 外文期刊>Microelectronics international: Journal of ISHM--Europe, the Microelectronics Society--Europe >Silicon-on-insulator lateral dual sidewall Schottky (SOI-LDSS) concept for improved rectifier performance: a two-dimensional simulation study

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Silicon-on-insulator lateral dual sidewall Schottky (SOI-LDSS) concept for improved rectifier performance: a two-dimensional simulation study

机译：绝缘体上硅横向双侧壁肖特基（SOI-LDSS）概念，用于改善整流器性能：二维仿真研究

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摘要

Purpose - To develop a silicon lateral Schottky rectifier with low forward voltage drop and low reverse leakage current while its breakdown voltage is significantly larger than that of a conventional Schottky rectifier.

机译：目的-开发一种具有低正向压降和低反向漏电流的硅横向肖特基整流器，同时其击穿电压明显大于传统的肖特基整流器。

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《Microelectronics international: Journal of ISHM--Europe, the Microelectronics Society--Europe》 |2006年第1期|共3页
作者
Kumar MJ; Reddy CL;
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正文语种 eng
中图分类微电子学、集成电路（IC）;
关键词
semiconductor devices; silicon; simulation; BREAKDOWN VOLTAGE; REVERSE CHARACTERISTICS; TMBS RECTIFIER; LMDS RECTIFIER; EXCELLENT; DEVICE;

机译：半导体器件;硅;仿真;击穿电压;反向特性;TMBS整流器;LMDS整流器;优良的器件;

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1. Silicon-on-insulator lateral dual sidewall Schottky (SOI-LDSS) concept for improved rectifier performance: a two-dimensional simulation study [J] . Kumar MJ, Reddy CL Microelectronics international: Journal of ISHM--Europe, the Microelectronics Society--Europe . 2006,第1期

机译：绝缘体上硅横向双侧壁肖特基（SOI-LDSS）概念，用于改善整流器性能：二维仿真研究
2. Trapezoid mesa trench metal-oxide semiconductor barrier Schottky rectifier： an improved Schottky rectifier with better reverse characteristics [J] . Li Wei-Yi, Ru Guo-Ping, Jiang Yu-Long, 中国物理：英文版 . 2011,第008期

机译：梯形台面沟槽金属氧化物半导体势垒肖特基整流器：改进的肖特基整流器，具有更好的反向特性
3. Trapezoid mesa trench metal-oxide semiconductor barrier Schottky rectifier: an improved Schottky rectifier with better reverse characteristics [J] . Li Wei-Yi, Ru Guo-Ping, Jiang Yu-Long, 中国物理：英文版 . 2011,第008期

机译：梯形台面沟槽金属氧化物半导体势垒肖特基整流器：改进的肖特基整流器，具有更好的反向特性
4. A New Lateral Trench Sidewall Schottky (LTSS) Rectifier on SOI [C] . Yashvir Singh, M. Jagadesh Kumar 2002 International Conference on Modeling and Simulation of Microsystems, Apr 21-25, 2002, San Juan, Puerto Rico, USA . 2002

机译：SOI上的新型横向沟槽侧壁肖特基（LTSS）整流器
5. High-voltage silicon Trench Sidewall OXide-Merged p-i-n/Schottky (TSOX-MPS) rectifier. [D] . Min, Won Gi. 2000

机译：高压硅Trench侧壁氧化物合并的p-i-n /肖特基（TSOX-MPS）整流器。
6. Arrays of individually controlled ions suitable for two-dimensional quantum simulations [O] . Manuel Mielenz, Henning Kalis, Matthias Wittemer, -1

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Silicon-on-insulator lateral dual sidewall Schottky (SOI-LDSS) concept for improved rectifier performance: a two-dimensional simulation study

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