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首页> 外文期刊>Microelectronics international: Journal of ISHM--Europe, the Microelectronics Society--Europe >Enhanced photovoltaic properties of solar cell based on ITO/PEDOT:PSS/ZnO:P3HT/Ag by an annealing treatment
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Enhanced photovoltaic properties of solar cell based on ITO/PEDOT:PSS/ZnO:P3HT/Ag by an annealing treatment

机译:通过退火处理增强了基于ITO / PEDOT:PSS / ZnO:P3HT / Ag的太阳能电池的光伏性能

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摘要

The purpose of this paper is to demonstrate the influence of annealing treatment on the photovoltaic properties of the solar cell based on ITO/PEDOT:PSS/ZnO:P3HT/Ag. Design/methodology/approach - The influence of the annealing temperature and time on the P3HT/ZnO interface morphology and the ITO/PEDOT:PSS/ZnO:P3HT/Ag solar cell performance was discussed. The morphology and the current-voltage (J-V) characteristics were investigated by atomic force morphology (AFM) and solar simulator with an AM 1.5 G filter under an irradiation intensity of 100 mW cm~(-2). The light intensity was calibrated using a standard silicon photovoltaic solar cell. Findings - The photovoltaic performances were found to have been greatly enhanced by an annealing treatment at 145 C for 30 min. Originality/value - The paper demonstrates that the annealing treatments play a crucial role in improving the morphology and J-V performance of the ITO/PEDOT:PSS/ZnO:P3HT/Ag solar cell.
机译:本文的目的是演示基于ITO / PEDOT:PSS / ZnO:P3HT / Ag的退火处理对太阳能电池光伏性能的影响。设计/方法/方法-讨论了退火温度和时间对P3HT / ZnO界面形态以及ITO / PEDOT:PSS / ZnO:P3HT / Ag太阳电池性能的影响。在100 mW cm〜(-2)的辐射强度下,通过原子力形态学(AFM)和带有AM 1.5 G滤光片的太阳模拟器,研究了形态学和电流-电压(J-V)特性。使用标准的硅光伏太阳能电池来校准光强度。发现-通过在145°C下进行30分钟的退火处理,光伏性能大大提高。原创性/价值-本文证明了退火处理对于改善ITO / PEDOT:PSS / ZnO:P3HT / Ag太阳能电池的形态和J-V性能起着至关重要的作用。

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