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Morphologies of Silicon Crystals Solidified on a Chill Plate

机译:冷却板上凝固的硅晶体的形态

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摘要

Electromagnetically levitated liquid droplets of pure Si or a Si-Ge alloy were cooled to different temperatures and then dropped onto a chill plate of Cu. Droplet oscillations mark the solid/liquid interface during solidification and permit the different crystal morphologies of silicon to be observed on the quenched surface by scanning electron microscopy (SEM). A spherical morphology found on the quenched surface represents the initial stage of crystal growth. Further growth leads to octahedral crystals bounded by {111} faces near equilibrium and to other polyhedra or even faceted dendrites further from equilibrium. The spherical growth can be observed only when the initial melt undercooling is moderately high. The critical size at which spherical crystals start to develop dendritic growth is much bigger than that calculated from the Mullins and Sekerka model, and is bigger than the Coriell and Parker model when kinetic undercooling is taken into account.
机译:将纯硅或Si-Ge合金的电磁悬浮液滴冷却至不同温度,然后滴到Cu冷却板上。液滴振荡标记了固化过程中的固/液界面,并通过扫描电子显微镜(SEM)在淬火后的表面观察到了硅的不同晶体形态。在淬火表面发现的球形形态代表晶体生长的初始阶段。进一步的生长会导致由{111}束缚的八面体晶体面接近平衡,而远离平衡面的其他多面体甚至面状枝晶也将生长。仅当初始熔体过冷度适中时,才能观察到球形生长。球形晶体开始形成树枝状晶体生长的临界尺寸远大于根据Mullins和Sekerka模型计算得出的临界尺寸,并且考虑到动力学过冷时,其临界尺寸大于Coriell和Parker模型。

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