Effect of the charge Distribution at the Interface on the Properties of PZT/SiO_2/Si Heterostructure

摘要

Asymmetry related to the conduction type of the Si substrate and polarization direction of PZT were found in the polarization-voltage (P-V) loops, capacitance voltage (C-V) curves and resistance of the integrated system. According to the configuration and the characteristic of the integrated Structure, we suggest that the space-charge layer in Si and the tunneling process between Si and PZT during the polarization are the main causes for this asymmetry.