Compatibility of Material Processing and Fabrication of Sol-Gel Derived PZT Based Devices

摘要

This study investigates the compatibility of material processing and fabrication of micro devices based on sol-gel derived lead zirconate titanate (PZT) thin films. High temperature annealing of sol-gel derived PZT may cause cracking and diffusion of structure layers. The introduction of a buffer layer, (LaxSr_(1-x))MnO_3, between PZT thin film and metal electrodes improves PZT crystallization andferroelectricity. Annealing temperature of PZT/LSMO structure using furnace heating is investigated and compared with CO_2 laser annealing. A parameter study of PZT poling shows the improvement of film properties. The fabrication procedures of two exemplar devices, a micro accelerometer and a FPW acoustic sensor illustrate the interaction issues among material structures and processes.