Effect of Radio Frequency Power on the Physicochemical Properties of MoS2 Films Obtained by rf Magnetron Sputtering

摘要

This paper presents the results of the fabrication and characterization of MoS2 thin films obtained at different radio frequency (rf) power using a surface profiler, a 4-point probe, X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and distilled water and ethylene glycol contact angle measurements. The thickness of MoS2 thin films increased from 100 to 240 nm as the rf power increased from 100 to 200 W. The surface resistance increased with increasing rf power. The high-resolution XPS spectra indicated that Mo species with lower oxidation states formed in the MoS2 thin films at higher rf power. The ratio of Mo/S was independent of the rf power. The total surface-free energy (SFE) varied by changing the rf power. The contribution of polar SFE was greater than dispersive SFE to the total SFE for all MoS2 films. The changing propensity of polar SFE was similar to the total SFE.