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Reduction of Graphene Oxide and its Effect on Square Resistance of Reduced Graphene Oxide Films

机译:氧化石墨烯的还原及其对还原氧化石墨烯薄膜方电阻的影响

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摘要

Graphite oxide was prepared via the modified Hummers' method and graphene via chemical reduction. Deoxygenation efficiency of graphene oxide was compared among single reductants including sodium borohydride, hydrohalic acids, hydrazine hydrate, and vitamin C. Two-step reduction of graphene oxide was primarily studied. The reduced graphene oxide was characterized by XRD, TG, SEM, XPS, and Raman spectroscopy. Square resistance was measured as well. Results showed that films with single-step N2H4 reduction have the best transmittance and electrical conductivity with square resistance of similar to 5746/sq at 70% transmittance. This provided an experimental basis of using graphene for electronic device applications.
机译:通过改进的Hummers方法制备氧化石墨,通过化学还原制备石墨烯。比较了硼氢化钠,氢卤酸,水合肼和维生素C等单一还原剂中氧化石墨烯的脱氧效率。主要研究了氧化石墨烯的两步还原。还原的氧化石墨烯通过XRD,TG,SEM,XPS和拉曼光谱法表征。还测量了正方形电阻。结果表明,一步法还原N2H4的薄膜具有最佳的透射率和电导率,在70%的透射率下,方电阻约为5746 / sq。这提供了将石墨烯用于电子设备应用的实验基础。

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