首页> 外国专利> Preparing method of reduced graphene oxide film using a chemical reduction method and a pressure-assisted thermal reduction method, reduced graphene oxide film prepared by the same, and graphene electrode including the reduced graphene oxide film

Preparing method of reduced graphene oxide film using a chemical reduction method and a pressure-assisted thermal reduction method, reduced graphene oxide film prepared by the same, and graphene electrode including the reduced graphene oxide film

机译:使用化学还原法和压力辅助热还原法的还原性氧化石墨烯膜的制备方法,由其制备的还原性氧化石墨烯膜和包括该还原性氧化石墨烯膜的石墨烯电极

摘要

A preparing method of a reduced graphene oxide film, a reduced graphene oxide film prepared by the preparing method, a graphene electrode including the reduced graphene oxide film, an organic thin film transistor including the graphene electrode, and an antistatic film including the reduced graphene oxide film are provided. The method for preparing a reduced graphene oxide film comprises: coating a graphene oxide-dispersed solution on a substrate to form a graphene oxide thin film; and reducing the graphene oxide thin film using a chemical reduction method and a pressure-assisted thermal reduction method to form a reduced graphene oxide film.
机译:还原性氧化石墨烯膜的制备方法,通过该制备方法制备的还原性氧化石墨烯膜,包括该还原性氧化石墨烯膜的石墨烯电极,包括该石墨烯电极的有机薄膜晶体管以及包括该还原性氧化石墨烯的抗静电膜提供胶卷。该还原型氧化石墨烯膜的制备方法包括:将分散有氧化石墨烯的溶液涂布在基板上以形成氧化石墨烯薄膜。使用化学还原法和压力辅助热还原法还原氧化石墨烯薄膜以形成还原的氧化石墨烯膜。

著录项

  • 公开/公告号US9236156B2

    专利类型

  • 公开/公告日2016-01-12

    原文格式PDF

  • 申请/专利权人 SNU R&DB FOUNDATION;

    申请/专利号US201414220399

  • 申请日2014-03-20

  • 分类号C23C16/40;C23C16/50;H05H1/24;H01B1/04;H01L51/00;H01L51/05;

  • 国家 US

  • 入库时间 2022-08-21 14:31:10

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