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首页> 外文期刊>ATB Metallurgie >EFFECT OF Al~(+3) CONCENTRATION ON AC ETCHING BEHAVIORS OF HIGH PURITY ALUMINUM PLAIN FOILS IN HYDROCHLORIC ACID ELECTROLYTES
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EFFECT OF Al~(+3) CONCENTRATION ON AC ETCHING BEHAVIORS OF HIGH PURITY ALUMINUM PLAIN FOILS IN HYDROCHLORIC ACID ELECTROLYTES

机译:Al〜(+3)浓度对高纯铝箔在盐酸溶液中AC刻蚀行为的影响

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摘要

A study has been made of the effect of Al~(+3) concentration in etching bath on morphology of the AC etched layers of high purity aluminum foils. The films etched at high aluminum ion concentrations are macro-thinned, whereas low aluminum ion concentrations give rise to very inhomogeneous etching. Layers etched at optimum concentrations of aluminum ion are deep and homogeneous, resulting in high capacitance when anodized. The corrosion potential for aluminum dissolution and the breakdown potential of oxide films increase with increasing aluminum ion concentration. The double layer capacitance obtained from impedance data can be used as the qualitative measure of the surface area of aluminum foil. Based on these results, a model for etching behavior at various aluminum concentrations has been suggested.
机译:研究了腐蚀液中Al〜(+3)浓度对高纯铝箔AC腐蚀层的形貌的影响。在高铝离子浓度下蚀刻的薄膜被宏观稀释,而低铝离子浓度会导致非常不均匀的蚀刻。以最佳铝离子浓度蚀刻的层很深且均匀,在阳极氧化时会产生高电容。铝溶解的腐蚀电位和氧化膜的击穿电位随着铝离子浓度的增加而增加。从阻抗数据获得的双层电容可以用作铝箔表面积的定性度量。根据这些结果,提出了在各种铝浓度下的刻蚀行为的模型。

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