A Strategy To Prepare High-Quality Monocrystalline Graphene: Inducing Graphene Growth with Seeding Chemical Vapor Deposition and Its Mechanism

摘要

High-quality monocrystalline graphene has gained considerable attention in fundamental physics, materials science, and nanoelectronics. However, the performance of the graphene obtained by chemical synthesis methods is currently significantly restricted by the crystal quality. Herein, a seeding chemical vapor deposition (SCVD) method is designed to cultivate high-quality monocrystalline graphene on a Cu(111) substrate with hexagonal boron nitride (h-BN) as the seed crystal. Combining the experimental and theoretical research, the nucleation behavior of the growth-induced graphene on the h-BN seed crystal is investigated, and the induced growth mechanism on the Cu(111) substrate is studied. The results show that the h-BN seed crystal can dramatically reduce the adsorption energy of active carbon atoms and the energy barrier for C-C aggregation at the BN/Cu(111) step, thus promoting graphene growth around the h-BN seed. Large monocrystalline graphene domains are obtained by the proposed SCVD method. Further study shows that the growth-induced graphene has good crystal quality and could maintain high structural integrity. This new strategy can be applied for growing high-quality graphene and other two-dimensional materials.