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SINGLE-STEP DIRECT GROWTH OF LARGE-AREA GRAPHENE AND GRAPHENE-BASED NANOSTRUCTURES ON SILICON BY PLASMA-ENHANCED CHEMICAL VAPOR DEPOSITION
SINGLE-STEP DIRECT GROWTH OF LARGE-AREA GRAPHENE AND GRAPHENE-BASED NANOSTRUCTURES ON SILICON BY PLASMA-ENHANCED CHEMICAL VAPOR DEPOSITION
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机译:等离子体增强化学气相沉积法在硅上单步直接生长大石墨烯和基于石墨烯的纳米结构
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摘要
A method of growing a plurality of graphene sheets includes providing a substrate comprising silicon, placing the substrate in a growth chamber, and flowing a gaseous carbon containing precursor and a carrier gas into the growth chamber. A partial pressure ratio of the gaseous carbon containing precursor to the carrier gas is less than 5.5. The method also includes generating a CMOS compatible microwave plasma in the growth chamber. The CMOS compatible microwave plasma is characterized by a power density between 60 W/cm3 and 80 W/cm3. The method further includes subjecting the substrate to the microwave plasma and growing the plurality of graphene sheets to fully cover the substrate.
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机译:一种生长多个石墨烯片的方法包括:提供包含硅的衬底;将衬底放置在生长室中;以及使气态含碳前体和载气流入生长室。气态含碳前体与载气的分压比小于5.5。该方法还包括在生长室中产生CMOS兼容的微波等离子体。 CMOS兼容微波等离子体的特征在于功率密度在60 W / cm 3 Sup>和80 W / cm 3 Sup>之间。该方法还包括使衬底经受微波等离子体的作用,并使多个石墨烯片生长以完全覆盖衬底。
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