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首页> 外文期刊>Current applied physics: the official journal of the Korean Physical Society >MgB_2 coated superconducting tapes with high critical current densities fabricated by hybrid physical-chemical vapor deposition
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MgB_2 coated superconducting tapes with high critical current densities fabricated by hybrid physical-chemical vapor deposition

机译:通过混合物理化学气相沉积法制备的具有高临界电流密度的MgB_2涂层超导带

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The MgB_2 coated superconducting tapes have been fabricated on textured Cu (0 0 1) and polycrystalline Hastelloy tapes using coated conductor technique, which has been developed for the second generation high temperature superconducting wires. The MgB_2/Cu tapes were fabricated over a wide temperature range of 460-520 °C by using hybrid physical-chemical vapor deposition (HPCVD) technique. The tapes exhibited the critical temperatures (T_c) ranging between 36 and 38 K with superconducting transition width (ΔT_c) of about 0.3-0.6 K. The highest critical current density (J_c) of 1.34 × 10~5 A/cm~2 at 5 K under 3 T is obtained for the MgB_2/Cu tape grown at 460 °C. To further improve the flux pinning property of MgB_2 tapes, SiC is coated as an impurity layer on the Cu tape. In contrast to pure MgB _2/Cu tapes, the MgB_2 on SiC-coated Cu tapes exhibited opposite trend in the dependence of J_c with growth temperature. The improved flux pinning by the additional defects created by SiC-impurity layer along with the MgB_2 grain boundaries lead to strong improvement in J_c for the MgB_2/SiC/Cu tapes. The MgB_2/ Hastelloy superconducting tapes fabricated at a temperature of 520 °C showed the critical temperatures ranging between 38.5 and 39.6 K. We obtained much higher J_c values over the wide field range for MgB _2/Hastelloy tapes than the previously reported data on other metallic substrates, such as Cu, SS, and Nb. The J_c values of J _c(20 K, 0 T) ~5.8 × 10~6 A/cm~2 and J_c(20 K, 1.5 T) ~2.4 × 10~5 A/cm~2 is obtained for the 2-μm-thick MgB_2/Hastelloy tape. This paper will review the merits of coated conductor approach along with the HPCVD technique to fabricate MgB_2 conductors with high T_c and J_c values which are useful for large scale applications.
机译:MgB_2涂层超导带已使用涂层导体技术在织构化的Cu(0 0 1)和多晶哈氏合金带上制造,该技术已为第二代高温超导线开发。通过使用混合物理化学气相沉积(HPCVD)技术,在460-520°C的宽温度范围内制造了MgB_2 / Cu带。胶带显示的临界温度(T_c)在36至38 K之间,超导过渡宽度(ΔT_c)约为0.3-0.6K。最高临界电流密度(J_c)为5时的1.34×10〜5 A / cm〜2对于在460°C下生长的MgB_2 / Cu带,在3 T下可获得K。为了进一步改善MgB_2带的助焊剂钉扎性能,将SiC作为杂质层涂覆在Cu带上。与纯MgB _2 / Cu带相比,SiC包覆的Cu带上的MgB_2在J_c对生长温度的依赖性方面表现出相反的趋势。 SiC杂质层与MgB_2晶界一起产生的附加缺陷导致的磁通钉扎现象得到了改善,从而导致MgB_2 / SiC / Cu带的J_c大大提高。在520°C的温度下制造的MgB_2 /哈氏合金超导带的临界温度范围为38.5至39.6K。我们在MgB _2 / Hastelloy带的宽范围内获得的J_c值远高于先前报道的其他金属数据基板,例如Cu,SS和Nb。对于2-型,获得了J _c(20 K,0 T)〜5.8×10〜6 A / cm〜2的J_c值和J_c(20 K,1.5 T)〜2.4×10〜5 A / cm〜2的J_c值微米级MgB_2 / Hastelloy胶带。本文将回顾涂覆导体方法与HPCVD技术的优点,以制造具有高T_c和J_c值的MgB_2导体,这些导体可用于大规模应用。

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