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Thin Film Transistor Gas Sensors Incorporating High-Mobility Diketopyrrolopyrole-Based Polymeric Semiconductor Doped with Graphene Oxide

机译:薄膜晶体管气体传感器,结合了高迁移率的基于二吡咯并吡咯的氧化石墨烯掺杂的聚合物半导体

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摘要

In this work, we fabricated a diketopyrrolopyrole-based donoracceptor copolymer composite film. This is a high-mobility semiconductor component with a functionalized-graphene-oxide (GO) gas-adsorbing dopant, used as an active layer in gas-sensing organic-field-effect transistor (OFET) devices. The GO content of the composite film was carefully controlled so that the crystalline orientation of the semiconducting polymer could be conserved, without compromising its gas-adsorbing ability. The resulting optimized device exhibited high mobility (>1 cm2 V-1 s(-1)) and revealed sensitive response during programmed exposure to various polar organic molecules (i.e., ethanol, acetone, and acetonitrile). This can be attributed to the high mobility of polymeric semiconductors, and also to their high surface-to-volume ratio of GO. The operating mechanism of the gas sensing GO-OFET is fully discussed in conjunction with charge-carrier trap theory. It was found that each transistor parameter (e.g., mobility, threshold voltage), responds independently to each gas molecule, which enables high selectivity of GO-OFETs for various gases. Furthermore, we also demonstrated practical GO-OFET devices that operated at low voltage (<1.5 V), and which successfully responded to gas exposure.
机译:在这项工作中,我们制作了一个基于二酮吡咯并吡咯的供体-受体共聚物复合膜。这是具有功能性氧化石墨烯(GO)气体吸附掺杂剂的高迁移率半导体组件,用作气体传感有机场效应晶体管(OFET)器件中的有源层。仔细控制复合膜的GO含量,以使半导体聚合物的晶体取向得以保留,而不会损害其气体吸收能力。所得的优化装置显示出高迁移率(> 1 cm2 V-1 s(-1)),并且在程序化暴露于各种极性有机分子(即乙醇,丙酮和乙腈)的过程中显示出敏感的响应。这可以归因于聚合物半导体的高迁移率,也归因于其高的GO体积比。结合电荷载流子陷阱理论全面讨论了气敏GO-OFET的工作机理。发现每个晶体管参数(例如,迁移率,阈值电压)独立地响应于每个气体分子,这使得GO-OFET对各种气体具有高选择性。此外,我们还演示了实用的GO-OFET器件,该器件可在低电压(<1.5 V)下运行,并成功地响应了气体暴露。

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