首页> 外文期刊>Journal of Materials Chemistry, C. materials for optical and electronic devices >WO3 nanobelt doped PEDOT:PSS layers for efficient hole-injection in quantum dot light-emitting diodes
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WO3 nanobelt doped PEDOT:PSS layers for efficient hole-injection in quantum dot light-emitting diodes

机译:WO3纳米纤维掺杂PEDOT:PSS层,用于在量子点发光二极管中有效的空穴注入

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摘要

Through a facile solid-state mechanochemical method, we have prepared WO3 nanobelts with a length of similar to 80 nm and a width of similar to 10 nm, which were doped into PEDOT:PSS as a hybrid hole-injecting layer (HIL) for conventional red quantum dot light-emitting diodes (QLEDs). The work function (W-F) of the hybrid HIL was enhanced from 4.91 to 5.25 eV and the hole-injecting barrier was decreased from 0.89 to 0.55 eV. Notably, an optimal red QLED based on the hybrid HIL PEDOT:PSS:WO3 (4.0 wt%) achieved a satisfactory reduction in the driving voltage at the luminance of 100 cd A(-1) from 5.18 V (pristine PEDOT:PSS) to 2.97 V. Moreover, the optimal device exhibits a maximal current efficiency of 15.5 cd A(-1) and a high external quantum efficiency (EQE) of 10.60%, which are nearly two-folds higher than those (8.0 cd A(-1) and 5.82%) of the reference device based on pristine PEDOT:PSS. It was demonstrated that doping these as-prepared WO3 nanobelts into the PEDOT:PSS could be an effective route toward high-performance QLEDs.
机译:通过容易固态的机械化学方法,我们制备了长度与80nm相似的WO3纳米轴,其宽度类似于10nm,其掺杂到PEDOT中:PSS作为常规的混合孔注射层(HIL)。红色量子点发光二极管(QLEDS)。杂交HIL的工作功能(W-F)从4.91增加到5.25eV,并且空穴注入屏障从0.89降至0.55eV。值得注意的是,基于混合HIL PEDOT的最佳红色QLED:PSS:WO3(4.0wt%)在5.18V(原始PEDOT:PSS)的100cd A(-1)的亮度下的驱动电压令人满意地降低2.97 V.此外,最佳装置的最大电流效率为15.5cd a(-1)和高外部量子效率(Eqe),为10.60%,其高于那些(8.0cd a(-1)的两倍基于原始PEDOT的参考装置(PS))和5.82%)。据证明,将这些原制的WO3纳米核掺杂到PEDOT中:PSS可以是高性能QLED的有效途径。

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    Soochow Univ Inst Funct Nano &

    Soft Mat FUNSOM Jiangsu Key Lab Carbon Based Funct Mat &

    Devices Suzhou 215123 Jiangsu Peoples R China;

    Soochow Univ Inst Funct Nano &

    Soft Mat FUNSOM Jiangsu Key Lab Carbon Based Funct Mat &

    Devices Suzhou 215123 Jiangsu Peoples R China;

    Soochow Univ Inst Funct Nano &

    Soft Mat FUNSOM Jiangsu Key Lab Carbon Based Funct Mat &

    Devices Suzhou 215123 Jiangsu Peoples R China;

    Soochow Univ Inst Funct Nano &

    Soft Mat FUNSOM Jiangsu Key Lab Carbon Based Funct Mat &

    Devices Suzhou 215123 Jiangsu Peoples R China;

    Soochow Univ Inst Funct Nano &

    Soft Mat FUNSOM Jiangsu Key Lab Carbon Based Funct Mat &

    Devices Suzhou 215123 Jiangsu Peoples R China;

    Nanchang Univ Sch Mat Sci &

    Engn Nanchang 330031 Jiangxi Peoples R China;

    Soochow Univ Inst Funct Nano &

    Soft Mat FUNSOM Jiangsu Key Lab Carbon Based Funct Mat &

    Devices Suzhou 215123 Jiangsu Peoples R China;

    Soochow Univ Inst Funct Nano &

    Soft Mat FUNSOM Jiangsu Key Lab Carbon Based Funct Mat &

    Devices Suzhou 215123 Jiangsu Peoples R China;

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  • 正文语种 eng
  • 中图分类 物理化学(理论化学)、化学物理学;
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