首页> 外国专利> Mn I--VI Mn-doped I--VI type white light-emitting quantum dots for white light-emitting diode method for synthesizing the same and white light-emitting diode using the same

Mn I--VI Mn-doped I--VI type white light-emitting quantum dots for white light-emitting diode method for synthesizing the same and white light-emitting diode using the same

机译:Mn I--VI用于白色发光二极管的Mn掺杂的I--VI型白色发光量子点的合成方法以及使用该方法的白色发光二极管

摘要

A quantum dot capable of emitting white light by using a single kind and capable of spectrum control so as to realize various color temperatures, a method for manufacturing the same and white light emitting diode using the same. A quantum dots according to the present invention is a core quantum dots formed by doping I-III-VI-based ternary system Cu-Ga-S or Ag-Ga-S, or I-III-VI-based quaternary system X-In-Ga-S or Zn-X-Ga-S (X = Cu, Ag) with Mn to (X = Cu, Ag) and a white light emitting quantum dot having a ZnS shell. The white light emitting diode according to the present invention is formed by integrating such quantum dots in a light source device such as a near-ultraviolet LED or a blue LED.
机译:一种能够通过使用单一种类发射白光并且能够进行光谱控制从而实现各种色温的量子点,一种用于制造该量子点的方法以及使用该量子点的白光发光二极管。根据本发明的量子点是通过掺杂基于I-III-VI的三元体系Cu-Ga-S或Ag-Ga-S或基于I-III-VI的四元体系X-In形成的核心量子点。 -Mn-(X = Cu,Ag)的-Ga-S或Zn-X-Ga-S(X = Cu,Ag),并且具有ZnS壳的发白光的量子点。通过将这样的量子点集成在诸如近紫外LED或蓝色LED的光源装置中来形成根据本发明的白色发光二极管。

著录项

  • 公开/公告号KR101734464B1

    专利类型

  • 公开/公告日2017-05-11

    原文格式PDF

  • 申请/专利号KR20160012929

  • 发明设计人 YANG HEE SUN;

    申请日2016-02-02

  • 分类号H01L33/04;H01L33/26;H01L33/44;H01L33/50;

  • 国家 KR

  • 入库时间 2022-08-21 13:25:33

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