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机译:具有孔强化注入层的Algan基深紫外发光二极管的特性
South China Normal Univ Inst Optoelect Mat &
Technol Guangzhou Guangdong Peoples R China;
South China Normal Univ Inst Optoelect Mat &
Technol Guangzhou Guangdong Peoples R China;
Chaoyang Radio Decice Co Ltd Chaoyang Peoples R China;
South China Normal Univ Inst Optoelect Mat &
Technol Guangzhou Guangdong Peoples R China;
South China Normal Univ Inst Optoelect Mat &
Technol Guangzhou Guangdong Peoples R China;
South China Normal Univ Inst Optoelect Mat &
Technol Guangzhou Guangdong Peoples R China;
South China Normal Univ Inst Optoelect Mat &
Technol Guangzhou Guangdong Peoples R China;
South China Normal Univ Inst Optoelect Mat &
Technol Guangzhou Guangdong Peoples R China;
Hole strengthened-injection layer; deep ultraviolet light-emitting diodes; hole injection efficiency;
机译:具有孔强化注入层的Algan基深紫外发光二极管的特性
机译:具有m形空穴阻挡层和w形电子阻挡层的AlGaN基深紫外发光二极管的增强的光学性能
机译:具有m形空穴阻挡层和w形电子阻挡层的AlGaN基深紫外发光二极管的增强的光学性能
机译:基于AlGaN的深紫外发光二极管和激光二极管的开发
机译:深度紫外发光二极管的偏振工程
机译:通过局部调制基于AlGaN的深紫外发光二极管的n-AlGaN层中的掺杂类型来改善电流扩散
机译:基于Algan的深紫外发光二极管的奇妙光学性能与基于内仑的最后量子屏障和步进电子阻挡层