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PTh/Co3O4 Nanocomposites as New Conducting Materials for Micro/Nano-Sized Electronic Devices

机译:PTH / CO3O4纳米复合材料作为微/纳米大小电子器件的新导电材料

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This paper reports polythiophene/cobalt (II,III) oxide (PTh/Co3O4) nanocomposites synthesized via in situ polymerization of thiophene in the presence of Co3O4 at various molar concentrations. Samples were characterized by Fourier transform infrared spectroscopy (FT-IR), X-ray diffraction (XRD), Energy-dispersive X-ray (EDX) spectroscopy, differential scanning calorimetry (DSC), thermogravimetric analysis (TGA) and atomic force microscopy (AFM). The alternating current (ac) conductivity of the samples was studied depending on the temperature. XRD analyses indicated that the filling process decreased the pi-pi stacking distance of PT chains. The most significant shift was observed in the C-S band of PTh depending on the filling process. Thermal stability of the PTh increased with increasing concentration of Co3O4. Filling process reduced the surface roughness of PTh. The ac conductivity analyses indicated that charge transport mechanism of the samples was consistent with corraleted barrier hopping (CBH) model. The conductivity of PTh increased about 18 times for maximum filling level depending on temperature and frequency. The thermal stability and controllable ac conductivity properties of PTh/Co3O4 nanocomposites showed that they can be used in the production of micro/nano-sized electronic circuit elements with lower cost. (C) 2017 Society of Plastics Engineers
机译:本文在各种摩尔浓度下,通过在CO3O4存在下,通过原位聚合在各种摩尔浓度下,通过在CO 3 O 4的存在下通过原位聚合而在二噻吩/钴(III,III)纳米复合材料中。通过傅里叶变换红外光谱(FT-IR),X射线衍射(XRD),能量分散X射线(EDX)光谱,差示扫描量热法(DSC),热重分析(TGA)和原子力显微镜( AFM)。根据温度研究样品的交流(AC)电导率。 XRD分析表明填充过程降低了PT链的PI-PI堆叠距离。根据填充过程,在PTH的C-S频带中观察到最显着的转变。 PTH的热稳定性随着CO3O4的浓度的增加而增加。填充过程降低了PTH的表面粗糙度。交流电导率分析表明样品的电荷传输机制与Rellaleted屏障跳跃(CBH)模型一致。根据温度和频率,PTH的电导率增加约18倍以获得最大填充水平。 PTH / CO3O4纳米复合材料的热稳定性和可控AC电导率特性表明,它们可用于生产具有较低成本的微/纳米大小的电子电路元件。 (c)2017年塑料工程师协会

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