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Generation-After-Next Power Electronics: Ultrawide-bandgap devices, high-temperature packaging, and magnetic nanocomposite materials

机译:次世代的电力电子产品:超宽带隙器件,高温封装和磁性纳米复合材料

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摘要

A new generation of power electronic conversion systems is being enabled by wide-bandgap (WBG) devices. Applications in both the civilian and defense sectors are already beginning to benefit from the improved size, weight, and power (SWaP) now being demonstrated in power converters utilizing silicon carbide (SiC) and/or gallium nitride (GaN) switches, and numerous manufacturers are offering various types of switching devices fabricated from these two WBG semiconductors.
机译:宽带隙(WBG)设备正在启用新一代的电力电子转换系统。改进后的尺寸,重量和功率(SWaP)已经在民用和国防领域的应用中开始受益,现在利用碳化硅(SiC)和/或氮化镓(GaN)开关的功率转换器已经证明了这一点,并且许多制造商我们提供由这两种WBG半导体制成的各种类型的开关器件。

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